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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. may 2010 doc id 17548 rev 1 1/14 14 stb4n62k3, stf4n62k3 sti4n62k3, STP4N62K3 n-channel 620 v, 1.8 ? , 3.8 a supermesh3? power mosfet d 2 pak, to-220fp, i 2 pak, to-220 features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitances improved diode reverse recovery characteristics zener-protected application switching applications description these devices are made using the supermesh3? power mosfet technology that is obtained via improvements applied to stmicroelectronics? s upermesh? technology combined with a new optimized vertical structure. the resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. figure 1. internal schematic diagram type v dss r ds(on) max i d pw stb4n62k3 stf4n62k3 sti4n62k3 STP4N62K3 620 v < 1.95 ? 3.8 a 70 w 25 w 70 w 70 w 1 3 1 2 3 1 2 3 1 2 3 d2pak i2pak to-220 to-220fp 1 3 d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stb4n62k3 stf4n62k3 sti4n62k3 STP4N62K3 4n62k3 d2pak to-220fp i2pak to-220 tape and reel tu b e tu b e tu b e www.st.com
contents stb/f/i/p4n62k3 2/14 doc id 17548 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
stb/f/i/p4n62k3 electrical ratings doc id 17548 rev 1 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 d2pak i2pak to-220fp v ds drain-source voltage (v gs = 0) 620 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 3.8 3.8 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 2 2 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 15.2 15.2 (1) a p tot total dissipation at t c = 25 c 70 25 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 3.8 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) tbd mj v esd(g-s) gate source esd(hbm-c = 100 pf, r = 1.5 k ?) 2500 v dv/dt (3) 3. i sd 3.8 a, di/dt = 200 a/s, v dd = 80% v (br)dss. peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 d2pak i2pak to-220fp r thj-case thermal resistance junction-case max 1.79 5 c/w r thj-pcb (1) 1. when mounted on 1inch sq fr-4 board, 2 oz cu thermal resistance junction-pcb max 30 c/w r thj-amb thermal resistance junction- ambient max 62.5 62.5 c/w t l maximum lead temperature for soldering purpose 300 300 c
electrical characteristics stb/f/i/p4n62k3 4/14 doc id 17548 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 620 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 1.9 a 1.8 1.95 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 450 60 10 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 496 v, v gs = 0 -tbd-pf c o(er) (2) 2. energy related is defined as a constant equivalent capacitance gi ving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -tbd-pf r g intrinsic gate resistance f = 1 mhz open drain - tbd - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 496 v, i d = 3.8 a, v gs = 10 v (see figure 3 ) - 14 tbd tbd - nc nc nc
stb/f/i/p4n62k3 electrical characteristics doc id 17548 rev 1 5/14 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 1.9 a, r g = 4.7 ?, v gs = 10 v (see figure 2 ) - tbd tbd tbd tbd - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 3.8 15.2 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3.8 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.8 a, di/dt = 100 a/s v dd = 60 v (see figure 7 ) - tbd tbd tbd ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.8 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 7 ) - tbd tbd tbd ns nc a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have specif ically been designed to enhanc e not only the device?s esd capability, but also to make th em safely absorb possible voltage tr ansients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protec t the device?s integrity. these int egrated zener diodes thus avoid the usage of external components gate-source breakdown voltage igs= 1 ma (open drain) 30 - v
test circuits stb/f/i/p4n62k3 6/14 doc id 17548 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
stb/f/i/p4n62k3 package mechanical data doc id 17548 rev 1 7/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stb/f/i/p4n62k3 8/14 doc id 17548 rev 1 figure 8. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
stb/f/i/p4n62k3 package mechanical data doc id 17548 rev 1 9/14 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
package mechanical data stb/f/i/p4n62k3 10/14 doc id 17548 rev 1 d2pak (to-263) mechanical data dim h c n i m m min typ max min typ max 1 8 1 . 0 3 7 1 . 0 0 6 . 4 0 4 . 4 a 9 0 0 . 0 1 0 0 . 0 3 2 . 0 3 0 . 0 1 a 7 3 0 . 0 7 2 0 . 0 3 9 . 0 0 7 . 0 b 7 6 0 . 0 5 4 0 . 0 0 7 . 1 4 1 . 1 2 b 4 2 0 . 0 7 1 0 . 0 0 6 . 0 5 4 . 0 c 3 5 0 . 0 8 4 0 . 0 6 3 . 1 3 2 . 1 2 c 8 6 3 . 0 2 5 3 . 0 5 3 . 9 5 9 . 8 d 5 9 2 . 0 0 5 . 7 1 d 9 0 4 . 0 4 9 3 . 0 0 4 . 0 1 0 1 e 4 3 3 . 0 0 5 . 8 1 e 1 . 0 4 5 . 2 e 8 0 2 . 0 2 9 1 . 0 8 2 . 5 8 8 . 4 1 e 4 2 6 . 0 0 9 5 . 0 5 8 . 5 1 5 1 h 6 0 1 . 0 9 9 0 . 0 9 6 . 2 9 4 . 2 1 j 0 1 1 . 0 0 9 0 . 0 9 7 . 2 9 2 . 2 l 5 5 0 . 0 5 0 . 0 0 4 . 1 7 2 . 1 1 l 9 6 0 . 0 1 5 0 . 0 5 7 . 1 0 3 . 1 2 l 6 1 0 . 0 4 . 0 r 8 0 8 0 2 v 0079457_m
stb/f/i/p4n62k3 package mechanical data doc id 17548 rev 1 11/14 i2pak (to-262) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 2.40 2.72 0.094 0.107 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.2 3 1. 3 20.04 8 0.052 d 8 .95 9. 3 50. 3 52 0. 3 6 8 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0. 3 9 3 0.410 l1 3 14 0.511 0.551 l1 3 .50 3 .9 3 0.1 3 7 0.154 l2 1.27 1.40 0.050 0.055
package mechanical data stb/f/i/p4n62k3 12/14 doc id 17548 rev 1 5 package mechanical data tape and reel shipment d 2 pak footprint dim. mm inch min. max. min. max. a 33 0 12.992 b 1.5 0.059 c12. 8 1 3 .2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.0 3 9 n 100 3 .9 3 7 t 3 0.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.41 3 0.421 b0 15.7 15.9 0.61 8 0.626 d 1.5 1.6 0.059 0.06 3 d1 1.59 1.61 0.062 0.06 3 e1.651. 8 5 0.065 0.07 3 f 11.4 11.6 0.449 0.456 k0 4. 8 5.0 0.1 8 9 0.197 p0 3 .9 4.1 0.15 3 0.161 p1 11.9 12.1 0.46 8 0.476 p2 1.9 2.1 0.075 0.0 8 2 r 50 1.574 t0.250. 3 5 0.009 8 0.01 3 7 w 2 3 .7 24. 3 0.9 33 0.956 tape mechanical data
stb/f/i/p4n62k3 revision history doc id 17548 rev 1 13/14 6 revision history table 10. document revision history date revision changes 05-may-2010 1 first release
stb/f/i/p4n62k3 14/14 doc id 17548 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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